क्यूआर कोड

Defect-engineered graphene-on-silicon-carbide platform for magnetic field sensing at greatly elevated temperatures

High-temperature electrical properties of p-type hydrogen-intercalated quasi-free-standing epitaxial Chemical Vapor Deposition graphene on semi-insulating vanadium-compensated on-axis 6H-SiC(0001) and high-purity on-axis 4H-SiC(0001) originate from the double-carrier system of spontaneous-polarizati...

पूर्ण विवरण

में बचाया:
मुख्य लेखकों: Tymoteusz Ciuk, Roman Kozłowski, Agata Romanowska, Andrzej Zagojski, Karolina Piętak-Jurczak, Beata Stańczyk, Krystyna Przyborowska, Dariusz Czołak, Paweł Kamiński
स्वरूप: Artigo
भाषा:Inglês
प्रकाशित: Elsevier 2023-12-01
श्रृंखला:Carbon Trends
विषय:
Graphene
Epitaxy
CVD
Ion implantation
Defect levels
HRPITS
ऑनलाइन पहुंच:http://www.sciencedirect.com/science/article/pii/S2667056923000585
टैग: टैग जोड़ें
कोई टैग नहीं, इस रिकॉर्ड को टैग करने वाले पहले व्यक्ति बनें!

समान संसाधन