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On the Development of Label-Free DNA Sensor Using Silicon Nanonet Field-Effect Transistors

In this paper, the process and electrical characteristics of DNA sensor devices based on silicon nanonet (SiNN) field-effect transistors are reported. The SiNN, another name of randomly oriented Si nanowires network, was successfully integrated into transistor as p-type channel using standard microe...

Ausführliche Beschreibung

Gespeichert in:
Hauptverfasser: Thi Thu Thuy Nguyen, Maxime Legallais, Fanny Morisot, Thibauld Cazimajou, Mireille Mouis, Bassem Salem, Valérie Stambouli, Céline Ternon
Format: Artigo
Sprache:Inglês
Veröffentlicht: MDPI AG 2017-08-01
Schriftenreihe:Proceedings
Schlagworte:
silicon nanowires
nanonets
field-effect transistors
electrical characteristics
DNA sensor
label-free detection
functionalization
GOPS
hybridization
Online-Zugang:https://www.mdpi.com/2504-3900/1/4/312
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