On the Development of Label-Free DNA Sensor Using Silicon Nanonet Field-Effect Transistors
In this paper, the process and electrical characteristics of DNA sensor devices based on silicon nanonet (SiNN) field-effect transistors are reported. The SiNN, another name of randomly oriented Si nanowires network, was successfully integrated into transistor as p-type channel using standard microe...
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| Autori principali: | , , , , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI AG
2017-08-01
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| Serie: | Proceedings |
| Soggetti: | |
| Accesso online: | https://www.mdpi.com/2504-3900/1/4/312 |
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