External Electric Field Effect on Shallow Donor Impurity States in Zinc-Blende InxGa1−xN/GaN Symmetric Coupled Quantum Dots
Based on the effective-mass approximation and variational procedure, the ground-state donor binding energy in a cylindrical zinc-blende InxGa1-xN/GaN symmetric coupled quantum dots (SCQDs) is investigated in the presence of the external electric field. Numerical results show that the donor binding e...
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| Principais autores: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Wiley
2017-01-01
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| coleção: | Advances in Condensed Matter Physics |
| Acesso em linha: | http://dx.doi.org/10.1155/2017/5652763 |
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