Performance of InGaN-Based Thin-Film LEDs With Flip-Chip Configuration and Concavely Patterned Surface Fabricated on Electroplating Metallic Substrate
In this paper, a p-pad-up InGaN-based flip-chip (FC) thin-film light-emitting diode (TFLED) on electroplating metallic substrate was fabricated by a combination of electrodes isolation, FC configuration, copper electroplating, and laser lift-off techniques. This allowed formation of n-contacts on Ga...
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| Autores principales: | , , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
IEEE
2016-01-01
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| Colección: | IEEE Photonics Journal |
| Materias: | |
| Acceso en línea: | https://ieeexplore.ieee.org/document/7389483/ |
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