FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability

Performance, scalability, and resilience to variability of Si SOI FinFETs and gate-all-around (GAA) nanowires (NWs) are studied using in-house-built 3-D simulation tools. Two experimentally based devices, a 25-nm gate length FinFET and a 22-nm GAA NW are modeled and then scaled down to 10.7and 10-nm...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Daniel Nagy, Guillermo Indalecio, Antonio J. Garcia-Loureiro, Muhammad A. Elmessary, Karol Kalna, Natalia Seoane
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	IEEE 2018-01-01
Цуврал:	IEEE Journal of the Electron Devices Society
Нөхцлүүд:	Drift-diffusion (DD) Monte Carlo (MC) simulations density gradient (DG) quantum corrections Schrödinger equation based quantum corrections Si FinFET gate-all-around (GAA) nanowire (NW) FET
Онлайн хандалт:	https://ieeexplore.ieee.org/document/8288601/
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!