Thermal transport properties in GaAs (110)/GaAs (100) and GaAs/InAs interfaces by Reverse Non-equilibrium Molecular Dynamics

It is well known that the physics of thermal management is quite challenging as electronic device sizes are miniaturized and new materials are developed. This study calculates the thermal interface conductance (TIC), thermal interface resistance (TIR) and thermal grain conductivity across GaAs(110)...

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Autori principali:	O.N. Nenuwe, O.E. Agbalagba
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	Joint Coordination Centre of the World Bank assisted National Agricultural Research Programme (NARP) 2019-11-01
Serie:	Journal of Applied Sciences and Environmental Management
Soggetti:	Interface conductance thermal resistance grain conductivity temperature.
Accesso online:	https://www.ajol.info/index.php/jasem/article/view/191394
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