Preparation of Remote Plasma Atomic Layer-Deposited HfO₂ Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices

Optimization of equipment structure and process conditions is essential to obtain thin films with the required properties, such as film thickness, trapped charge density, leakage current, and memory characteristics, that ensure reliability of the corresponding device. In this study, we fabricated me...

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Autores principales:	Jae-Hoon Yoo, Won-Ji Park, So-Won Kim, Ga-Ram Lee, Jong-Hwan Kim, Joung-Ho Lee, Sae-Hoon Uhm, Hee-Chul Lee
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	MDPI AG 2023-06-01
Colección:	Nanomaterials
Materias:	HfO<sub>2</sub> plasma-enhanced atomic layer deposition (PEALD) remote plasma memory window trapped charge density plasma damage
Acceso en línea:	https://www.mdpi.com/2079-4991/13/11/1785
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