Relaxable Damage in Hot-Carrier Stressing of n-MOS Transistors
A method for device characterization is experimented to qualify the relaxable damage in hot-carrier stressing of n-MOS transistors. The degradation of physical parameters of the body-drain junction of power HEXFETs is presented for applied stress condition Vg= Vd/2. Large decrease of the resistance...
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| Autori principali: | , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Wiley
2000-01-01
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| Serie: | Active and Passive Electronic Components |
| Soggetti: | |
| Accesso online: | http://dx.doi.org/10.1155/2000/74014 |
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