A Performance Optimized Operational Amplifier Using Transconductance Enhancement Topology Based on a-IGZO TFTs

This paper reports a performance optimized operational amplifier (OPAMP) using transconductance enhancement topology based on the amorphous indium- gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The performance of TFTs is enhanced by N2O plasma treatment that presents electrical character...

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Bibliografiska uppgifter

Huvudupphov:	Fanzhao Meng, Yi Li, Jun Li, Jie Liang, Jianhua Zhang
Materialtyp:	Artigo
Språk:	Inglês
Utgiven:	IEEE 2024-01-01
Serie:	IEEE Journal of the Electron Devices Society
Ämnen:	Amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) N₂O plasma treatment operational amplifier (OPAMP) positive feedback transconductance enhancement topology
Länkar:	https://ieeexplore.ieee.org/document/10438721/
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