Ultrafast Laser Writing Deep inside Silicon with THz-Repetition-Rate Trains of Pulses
Three-dimensional laser writing inside silicon remains today inaccessible with the shortest infrared light pulses unless complex schemes are used to circumvent screening propagation nonlinearities. Here, we explore a new approach irradiating silicon with trains of femtosecond laser pulses at repetit...
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| Autors principals: | , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
American Association for the Advancement of Science (AAAS)
2020-01-01
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| Col·lecció: | Research |
| Accés en línia: | http://dx.doi.org/10.34133/2020/8149764 |
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