Use of Laser Interferometry to Determine the End Time of the Plasma-Chemical Etching of p-GaN and AlGaN Layers of the p-GaN/AlGaN/GaN Heterostructure with Two-Dimensional Electron Gas
Regularities of the reflected signal intensity changing in time, recorded by the detector of the laser interferometer with the operating frequency of 670 nm during the inductively coupled plasma reactive ion etching in a Cl2/N2/O2 atmosphere of GaN, p-GaN and AlGaN in AlGaN/GaN and p-GaN/AlGaN/GaN h...
Wedi'i Gadw mewn:
| Prif Awduron: | , |
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| Fformat: | Artigo |
| Iaith: | Russo |
| Cyhoeddwyd: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2022-12-01
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| Cyfres: | Доклады Белорусского государственного университета информатики и радиоэлектроники |
| Pynciau: | |
| Mynediad Ar-lein: | https://doklady.bsuir.by/jour/article/view/3495 |
| Tagiau: |
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
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