Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes
Bulk GaAs samples with different surface cleave planes were implanted with 100 and 10 000 V hydrogen ions inside an ultrahigh vacuum test apparatus to simulate ion back-bombardment of the photocathode inside a DC high voltage photogun. The photocathode yield, or quantum efficiency, could easily be r...
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| Hauptverfasser: | , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
American Physical Society
2016-10-01
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| Schriftenreihe: | Physical Review Accelerators and Beams |
| Online-Zugang: | http://doi.org/10.1103/PhysRevAccelBeams.19.103402 |
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