Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers

For optoelectronic devices from the near to the far infrared, the advantages of using ultrathin III-Sb layers as quantum wells or in superlattices are well known. However, these alloys suffer from severe surface segregation problems, so that the actual profiles are very different from the nominal on...

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Principais autores:	David Gonzalez, Sara Flores, Verónica Braza, Daniel F. Reyes, Alejandro Gallego Carro, Lazar Stanojević, Malte Schwarz, Jose María Ulloa, Teresa Ben
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2023-02-01
coleção:	Nanomaterials
Assuntos:	segregation III-Sb alloys STEM analyses
Acesso em linha:	https://www.mdpi.com/2079-4991/13/5/798
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