Deep‐UV Light‐Emitting Based on the hBN:S/hBN: Mg Homojunction
Abstract A hexagonal boron nitride (hBN) based p‐n homo‐junction is expected to demonstrate a great potential for being fabricated into an emitter (either light‐emitting diode or laser diode) in the deep‐UV spectral region. However, it remains a great challenge to achieve n‐type conductive hBN. Here...
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| Hoofdauteurs: | , , , , , , , , , , |
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| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
Wiley
2025-05-01
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| Reeks: | Advanced Science |
| Onderwerpen: | |
| Online toegang: | https://doi.org/10.1002/advs.202414353 |
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