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Deep‐UV Light‐Emitting Based on the hBN:S/hBN: Mg Homojunction

Abstract A hexagonal boron nitride (hBN) based p‐n homo‐junction is expected to demonstrate a great potential for being fabricated into an emitter (either light‐emitting diode or laser diode) in the deep‐UV spectral region. However, it remains a great challenge to achieve n‐type conductive hBN. Here...

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Bibliografische gegevens
Hoofdauteurs: Ransheng Chen, Qiang Li, Wannian Fang, Qifan Zhang, Jiaxing Li, Zhihao Zhang, Kangkang Liu, Feng Yun, Yanan Guo, Tao Wang, Yue Hao
Formaat: Artigo
Taal:Inglês
Gepubliceerd in: Wiley 2025-05-01
Reeks:Advanced Science
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Online toegang:https://doi.org/10.1002/advs.202414353
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