Deep‐UV Light‐Emitting Based on the hBN:S/hBN: Mg Homojunction

Abstract A hexagonal boron nitride (hBN) based p‐n homo‐junction is expected to demonstrate a great potential for being fabricated into an emitter (either light‐emitting diode or laser diode) in the deep‐UV spectral region. However, it remains a great challenge to achieve n‐type conductive hBN. Here...

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Bibliografski detalji

Glavni autori:	Ransheng Chen, Qiang Li, Wannian Fang, Qifan Zhang, Jiaxing Li, Zhihao Zhang, Kangkang Liu, Feng Yun, Yanan Guo, Tao Wang, Yue Hao
Format:	Artigo
Jezik:	Inglês
Izdano:	Wiley 2025-05-01
Serija:	Advanced Science
Teme:	DFT calculations hexagonal boron nitride homojunction sulfur doping
Online pristup:	https://doi.org/10.1002/advs.202414353
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