Bi<sub>2</sub>Se<sub>3</sub>/n-Si Schottky Junctions for Near-Infrared Photodetectors
Bi<sub>2</sub>Se<sub>3</sub> thin films with different thicknesses are deposited on prepatterned n-Si substrates by the vapor–solid deposition method, demonstrating photodetector performances in the visible and near-infrared range up to the telecommunication wavelength 1550 nm and showing response t...
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| Autores principales: | , , , , , , , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
MDPI AG
2026-01-01
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| Colección: | Nanomaterials |
| Materias: | |
| Acceso en línea: | https://www.mdpi.com/2079-4991/16/1/67 |
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