Highly responsive near-infrared photodetector with low dark current using graphene/germanium Schottky junction with Al2O3 interfacial layer
The performance of a graphene/Ge Schottky junction near-infrared photodetector is significantly enhanced by inserting a thin Al2O3 interfacial layer between graphene and Ge. Dark current is reduced by two orders of magnitudes, and the specific detectivity is improved to 1.9 × 1010 cm ⋅ Hz1/2W−1. The...
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| Główni autorzy: | , , , , , |
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| Format: | Artigo |
| Język: | Inglês |
| Wydane: |
Wiley
2021-02-01
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| Seria: | Nanophotonics |
| Hasła przedmiotowe: | |
| Dostęp online: | https://doi.org/10.1515/nanoph-2021-0002 |
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