Highly responsive near-infrared photodetector with low dark current using graphene/germanium Schottky junction with Al2O3 interfacial layer

The performance of a graphene/Ge Schottky junction near-infrared photodetector is significantly enhanced by inserting a thin Al2O3 interfacial layer between graphene and Ge. Dark current is reduced by two orders of magnitudes, and the specific detectivity is improved to 1.9 × 1010 cm ⋅ Hz1/2W−1. The...

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Hlavní autoři:	Kim Cihyun, Yoo Tae Jin, Chang Kyoung Eun, Kwon Min Gyu, Hwang Hyeon Jun, Lee Byoung Hun
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Wiley 2021-02-01
Edice:	Nanophotonics
Témata:	graphene graphene/germanium heterostructure interfacial oxide layer photodetector schottky junction
On-line přístup:	https://doi.org/10.1515/nanoph-2021-0002
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