Efficient Erase Operation by GIDL Current for 3D Structure FeFETs With Gate Stack Engineering and Compact Long-Term Retention Model

We have fabricated junctionless N-type silicon-on-insulator (SOI) ferroelectric-HfO₂ field effect transistors (FeFETs) with overlap and underlap structures between gate and drain/source regions to investigate the role of gate-induced-drain-leakage (GIDL) current in erase operation of FeFE...

Olles dieđut

Bibliográfalaš dieđut

Váldodahkkit:	Fei Mo, Jiawen Xiang, Xiaoran Mei, Yoshiki Sawabe, Takuya Saraya, Toshiro Hiramoto, Chun-Jung Su, Vita Pi-Ho Hu, Masaharu Kobayashi
Materiálatiipa:	Artigo
Giella:	Inglês
Almmustuhtton:	IEEE 2022-01-01
Ráidu:	IEEE Journal of the Electron Devices Society
Fáttát:	Junctionless FeFET ferroelectric HfO₂ GIDL retention
Liŋkkat:	https://ieeexplore.ieee.org/document/9677031/
Fáddágilkorat:	Lasit fáddágilkoriid Eai fáddágilkorat, Lasit vuosttaš fáddágilkora!