Adsorption of Mo and O at S-vacancy on ReS2 surface of ReS2/MoTe2 vdW heterointerface

Applications like high density information storage, neuromorphic computing, nanophotonics, etc. require ultra-thin electronic devices which can be controlled with applied electric field. Of late, atomically thin two-dimensional (2D) materials based van der Waals (vdW) heterointerfaces have emerged a...

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Auteurs principaux:	Puneet Kumar Shaw, Jehan Taraporewalla, Sohaib Raza, Akash Kumar, Rimisha Duttagupta, Hafizur Rahaman, Dipankar Saha
Format:	Artigo
Langue:	Inglês
Publié:	Elsevier 2025-06-01
Collection:	Chemical Physics Impact
Sujets:	VdW heterointerface S-vacancy defect Density functional theory Electron difference density Adsorption energy
Accès en ligne:	http://www.sciencedirect.com/science/article/pii/S2667022425000052
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