Low-power consumption anisotropic CMOS inverters based on n-ReS2 and p-WSe2
The surge in data volume and algorithmic complexity necessitates the development of highly integrated, low-power, and high-performance electronic components. Conventional complementary metal-oxide-semiconductor (CMOS) inverters, which rely solely on isotropic two-dimensional materials, encounter lim...
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| Автори: | , , , , , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
Tsinghua University Press
2025-03-01
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| Серія: | Nano Research |
| Предмети: | |
| Онлайн доступ: | https://www.sciopen.com/article/10.26599/NR.2025.94907231 |
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