Formation Mechanism of Rounded SiGe-Etch Front in Isotropic SiGe Plasma Etching for Gate-All-Around FETs
We investigated the formation mechanism of a rounded silicon-germanium (SiGe)-etch front (rounding) in gate-all-around field-effect transistor (GAA-FET) manufacturing. This rounding is created by the isotropic etching of the SiGe layer after anisotropic etching of the SiGe/Si stack, which degrades d...
Na minha lista:
| Principais autores: | , , , |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
IEEE
2021-01-01
|
| coleção: | IEEE Journal of the Electron Devices Society |
| Assuntos: | |
| Acesso em linha: | https://ieeexplore.ieee.org/document/9627731/ |
| Tags: |
Sem tags, seja o primeiro a adicionar uma tag!
|