A New Heterostructure Junctionless Tunnel Field Effect Transistor with Silicon-on-Nothing Technique for DC Parameter Improvement
In this paper, a novel heterostructure junctionless tunnel field effect transistor with silicon-on-nothing technology (SON HS-JLTFET) is proposed. The proposed device has two advantages over conventional JLTFET. First, one decade of increment in the ON current is achieved and subthreshold swing is i...
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| Главные авторы: | , |
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| Формат: | Artigo |
| Язык: | Persa |
| Опубликовано: |
Semnan University
2024-04-01
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| Серии: | مجله مدل سازی در مهندسی |
| Предметы: | |
| Online-ссылка: | https://modelling.semnan.ac.ir/article_8360_a374f76599339e39f86d948a44b54647.pdf |
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