Gate Driver for Wide-Bandgap Power Semiconductors With Small Negative Spike and Switching Ringing in Zero-Voltage Switching Circuit
Because SiC MOSFET-based zero-voltage switching (ZVS) power converter circuits provide high-speed switching, high power density and high efficiency can be achieved. However, an undesired negative spike is formed at the gate-source voltage owing to the crosstalk phenomenon in leg structures, such as...
Tallennettuna:
| Päätekijät: | , , , |
|---|---|
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
IEEE
2021-01-01
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| Sarja: | IEEE Access |
| Aiheet: | |
| Linkit: | https://ieeexplore.ieee.org/document/9585591/ |
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