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The design considerations of stray inductance for power modules with parallel-connected IGBT chips for a digital gate driver control

This paper aims to clarify the effect of asymmetric gate inductance Lg and emitter inductance Le inside power modules with two parallel-connected IGBTs on switching characteristics when a three-step digital gate driver is employed. Five types of IGBT modules with different Lg and Le were fabricated...

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Principais autores: Zaiqi Lou, Thatree Mamee, Katsuhiro Hata, Makoto Takamiya, Shin-ichi Nishizawa, Wataru Saito
Format: Artigo
Sprog:Inglês
Udgivet: Elsevier 2023-10-01
Serier:Power Electronic Devices and Components
Fag:
Parallel IGBT modules
Stray inductance
Digital gate driver
Switching loss
Overshoot
Gate voltage spike
Online adgang:http://www.sciencedirect.com/science/article/pii/S2772370423000159
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