The design considerations of stray inductance for power modules with parallel-connected IGBT chips for a digital gate driver control

This paper aims to clarify the effect of asymmetric gate inductance Lg and emitter inductance Le inside power modules with two parallel-connected IGBTs on switching characteristics when a three-step digital gate driver is employed. Five types of IGBT modules with different Lg and Le were fabricated...

Ausführliche Beschreibung

Bibliografische Detailangaben

Hauptverfasser:	Zaiqi Lou, Thatree Mamee, Katsuhiro Hata, Makoto Takamiya, Shin-ichi Nishizawa, Wataru Saito
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	Elsevier 2023-10-01
Schriftenreihe:	Power Electronic Devices and Components
Schlagworte:	Parallel IGBT modules Stray inductance Digital gate driver Switching loss Overshoot Gate voltage spike
Online-Zugang:	http://www.sciencedirect.com/science/article/pii/S2772370423000159
Tags:	Tag hinzufügen Keine Tags, Fügen Sie das erste Tag hinzu!