Growth mechanism of bismuth-filled nanoporous silicon with improved structural stability and low thermal conductivity

Nano porous silicon (PS) is a strong candidate for thermoelectric application, but it shows low structural stability and is prone to collapse. To enhance the structural stability of PS and offer a new way to improve its electrical conductivity, PS was prepared by electrochemical etching and Bi nanow...

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Principais autores:	Bingguo Liu, Tong Wang, Shunzi Li, Jian Wang, Baofu Hu, Jian Xu, Baoli Du
Format:	Artigo
Jezik:	Inglês
Izdano:	Elsevier 2024-05-01
Serija:	Results in Physics
Teme:	Porous silicon Pore configuration Nano bismuth Electrochemical deposition Thermal conductivity
Online dostop:	http://www.sciencedirect.com/science/article/pii/S2211379724003838
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