Growth mechanism of bismuth-filled nanoporous silicon with improved structural stability and low thermal conductivity
Nano porous silicon (PS) is a strong candidate for thermoelectric application, but it shows low structural stability and is prone to collapse. To enhance the structural stability of PS and offer a new way to improve its electrical conductivity, PS was prepared by electrochemical etching and Bi nanow...
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| Principais autores: | , , , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Elsevier
2024-05-01
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| Serier: | Results in Physics |
| Fag: | |
| Online adgang: | http://www.sciencedirect.com/science/article/pii/S2211379724003838 |
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