Design and analysis of multichannel 10 nm nanosheet FinFET varying space region materials and doping concentrations

When developing a nano-chip, nano-electronics and its principles play a vital role in resultant circuit construction using numerous components. The channel spacing, length and height of the components is measured in nanometre (nm). These nm-sized channels with shorter lengths tend to increase operat...

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Detalhes bibliográficos

Principais autores:	Hima Bindu Valiveti, Indr Jeet Rajput, N. Udaya Kumar, Harsh Lohiya, R. Sri Uma Suseela, Atul Singla, Saurabh Rajvanshi
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Taylor & Francis Group 2024-12-01
coleção:	Cogent Engineering
Assuntos:	NanoSheet FinFET (NS-FinFET) gate all around (GAA) silicon on insulator (SOI) low K and high K dielectric material doping concentration short channel effect (SCE)
Acesso em linha:	https://www.tandfonline.com/doi/10.1080/23311916.2024.2406381
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