Addressing challenges inverse problem with convolutional neural networks and regulation techniques: Applications in extraction of physical parameters of semiconductors devices

The instability of the inverse problem is caused by its nonlocal and non-causal nature. This study addresses the inverse problem of determining the physical parameters of semiconductor devices. Based on statistical inversion theory, the probability distribution (posterior distribution) of the SBHs h...

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Главные авторы:	Ling-Feng Mao, S.K. Li, P. Cheng, L.J. Zhang
Формат:	Artigo
Язык:	Inglês
Опубликовано:	Elsevier 2024-10-01
Серии:	International Journal of Electrical Power & Energy Systems
Предметы:	Inverse problem Schottky barrier height Convolutional neural network Metal/semiconductor contact Thermionic emission
Online-ссылка:	http://www.sciencedirect.com/science/article/pii/S0142061524003934
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