Addressing challenges inverse problem with convolutional neural networks and regulation techniques: Applications in extraction of physical parameters of semiconductors devices

The instability of the inverse problem is caused by its nonlocal and non-causal nature. This study addresses the inverse problem of determining the physical parameters of semiconductor devices. Based on statistical inversion theory, the probability distribution (posterior distribution) of the SBHs h...

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Hlavní autoři:	Ling-Feng Mao, S.K. Li, P. Cheng, L.J. Zhang
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Elsevier 2024-10-01
Edice:	International Journal of Electrical Power & Energy Systems
Témata:	Inverse problem Schottky barrier height Convolutional neural network Metal/semiconductor contact Thermionic emission
On-line přístup:	http://www.sciencedirect.com/science/article/pii/S0142061524003934
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