A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region
A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied. The novel structure improves the saturation current (I<sub>dsat</sub>) and transconductance (g<sub>m</sub>) by adding a heavily doped region, redu...
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| Principais autores: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI AG
2021-04-01
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| coleção: | Micromachines |
| Assuntos: | |
| Acesso em linha: | https://www.mdpi.com/2072-666X/12/5/488 |
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