Optimizing SOI-MESFET transistor performance at high frequencies by air-oxide layers in the channel and a nickel layer in the box
In this paper, we introduce a new transistor structure that has improved alternating current and direct current parameters compared to the basic structure. The cutoff frequency of the proposed structure is 33 GHz, while the cutoff frequency of the basic structure is 25.5 GHz. One important improveme...
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| Autors principals: | , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Elsevier
2024-05-01
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| Col·lecció: | Physics Open |
| Matèries: | |
| Accés en línia: | http://www.sciencedirect.com/science/article/pii/S2666032624000127 |
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