Suppressing the Capacitive Coupling by Adjusting the Precharge Biasing Scheme in a Two-Transistor Dynamic Random-Access Memory Operation

In this study, the impact of capacitive coupling (CC) caused by the parasitic capacitance components of metal-oxide semiconductor field effect transistors (MOSFETs) on the data stored in a two-transistor dynamic random-access memory (2T DRAM), is investigated, and a method to suppress CC is proposed...

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Bibliografiske detaljer

Principais autores:	Ju Hong Min, Jihun Kang, Jang Hyun Kim, Seongjae Cho
Format:	Artigo
Sprog:	Inglês
Udgivet:	IEEE 2026-01-01
Serier:	IEEE Access
Fag:	Processing-in-memory (PIM) two-transistor dynamic random-access memory (2T DRAM) parasitic capacitive coupling precharge inference accuracy circuit simulation
Online adgang:	https://ieeexplore.ieee.org/document/11370724/
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