Random ferroelectric and dielectric phase distribution-induced device variation of negative capacitance field-effect transistors

Negative-capacitance field-effect transistors (NC-FETs) are significantly affected by their ferroelectric (FE)/dielectric (DE) phase configurations owing to the uncertainty of their crystalline phases. This study presents an analysis of random FE/DE grain distribution-induced variations from multipl...

Descrizione completa

Dettagli Bibliografici

Autori principali:	Weifeng Lü, Dengke Chen, Caiyun Zhang, Weijie Wei, Ying Han
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	Elsevier 2023-04-01
Serie:	Results in Physics
Soggetti:	Negative capacitance field-effect transistor Crystalline phase Random variations Ferroelectric/dielectric grain
Accesso online:	http://www.sciencedirect.com/science/article/pii/S221137972300181X
Tags:	Aggiungi Tag Nessun Tag, puoi essere il primo ad aggiungerne!!