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Random ferroelectric and dielectric phase distribution-induced device variation of negative capacitance field-effect transistors

Negative-capacitance field-effect transistors (NC-FETs) are significantly affected by their ferroelectric (FE)/dielectric (DE) phase configurations owing to the uncertainty of their crystalline phases. This study presents an analysis of random FE/DE grain distribution-induced variations from multipl...

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Principais autores: Weifeng Lü, Dengke Chen, Caiyun Zhang, Weijie Wei, Ying Han
Format: Artigo
Sprog:Inglês
Udgivet: Elsevier 2023-04-01
Serier:Results in Physics
Fag:
Negative capacitance field-effect transistor
Crystalline phase
Random variations
Ferroelectric/dielectric grain
Online adgang:http://www.sciencedirect.com/science/article/pii/S221137972300181X
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