High‐Performance Near‐Ultraviolet Photodetector Using Mo2C/SiC Heterostructure
In this work, the results for a fabricated photodetector (PD) based on a molybdenum carbide (Mo2C) layer integrated with an n‐doped 4H‐silicon carbide (SiC) substrate, designed to operate in the near‐ultraviolet, are presented. The Mo2C layer is sputtered onto a cleaned SiC substrate, followed by th...
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| Hoofdauteurs: | , , , , , |
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| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
Wiley-VCH
2025-04-01
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| Reeks: | Advanced Photonics Research |
| Onderwerpen: | |
| Online toegang: | https://doi.org/10.1002/adpr.202400210 |
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