High‐Performance Near‐Ultraviolet Photodetector Using Mo2C/SiC Heterostructure

In this work, the results for a fabricated photodetector (PD) based on a molybdenum carbide (Mo2C) layer integrated with an n‐doped 4H‐silicon carbide (SiC) substrate, designed to operate in the near‐ultraviolet, are presented. The Mo2C layer is sputtered onto a cleaned SiC substrate, followed by th...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Sanjida Akter, Dinelka Somaweera, Khalil As’Ham, Salah Abdo, Andrey E. Miroshnichenko, Haroldo Takashi Hattori
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	Wiley-VCH 2025-04-01
Цуврал:	Advanced Photonics Research
Нөхцлүүд:	molybdenum carbides responsivities silicon carbides ultraviolet detections
Онлайн хандалт:	https://doi.org/10.1002/adpr.202400210
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!