Quantifying the Plasmonic Generation Rate of Non‐Thermal Hot Carriers with an AlGaN/GaN High‐Electron‐Mobility Transistor
Abstract Plasmonic generation of hot carriers in metallic nanostructures has attracted much attention due to its great potential in several applications. However, it is highly debated whether the enhancement is due to the hot carriers or the thermal effect. Here, the ability to exclude the thermal e...
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| Hauptverfasser: | , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Wiley
2021-07-01
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| Schriftenreihe: | Advanced Science |
| Schlagworte: | |
| Online-Zugang: | https://doi.org/10.1002/advs.202100362 |
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