Defect Engineering in Ti‐Doped Ta3N5 Thin Films for Enhanced Photoelectrochemical Water Splitting: Electronic Structure Modulation and Charge Carrier Dynamics

Tantalum nitride (Ta3N5) is a promising semiconductor for solar‐driven photoelectrochemical (PEC) water splitting, but its performance is limited by intrinsic defects. Here, we investigate the effect of titanium (Ti) doping (0–10 at%) on the structural, compositional, and optoelectronic properties o...

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Principais autores:	Shailesh Kalal, Martin Magnuson, Alessandro Chesini, Akshaya A, Sanath Kumar Honnali, Sophia Sahoo, Nakul Jain, Dibyendu Bhattacharyya, Andrei Gloskovskii, Mukul Gupta, Feng Wang, Michele Orlandi, Grzegorz Greczynski, Kenneth Järrendahl, Per Eklund, Jens Birch, Ching‐Lien Hsiao
פורמט:	Artigo
שפה:	Inglês
יצא לאור:	Wiley-VCH 2026-01-01
סדרה:	Small Structures
נושאים:	charge compensation defect engineering HAXPES nitride semiconductor photoelectrocatalysis Ta3N5
גישה מקוונת:	https://doi.org/10.1002/sstr.202500504
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