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Defect Engineering in Ti‐Doped Ta3N5 Thin Films for Enhanced Photoelectrochemical Water Splitting: Electronic Structure Modulation and Charge Carrier Dynamics

Tantalum nitride (Ta3N5) is a promising semiconductor for solar‐driven photoelectrochemical (PEC) water splitting, but its performance is limited by intrinsic defects. Here, we investigate the effect of titanium (Ti) doping (0–10 at%) on the structural, compositional, and optoelectronic properties o...

Deskribapen osoa

Gorde:
Egile Nagusiak: Shailesh Kalal, Martin Magnuson, Alessandro Chesini, Akshaya A, Sanath Kumar Honnali, Sophia Sahoo, Nakul Jain, Dibyendu Bhattacharyya, Andrei Gloskovskii, Mukul Gupta, Feng Wang, Michele Orlandi, Grzegorz Greczynski, Kenneth Järrendahl, Per Eklund, Jens Birch, Ching‐Lien Hsiao
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: Wiley-VCH 2026-01-01
Saila:Small Structures
Gaiak:
charge compensation
defect engineering
HAXPES
nitride semiconductor
photoelectrocatalysis
Ta3N5
Sarrera elektronikoa:https://doi.org/10.1002/sstr.202500504
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