In-plane gate induced transition asymmetry of spin-resolved Landau levels in InAs-based quantum wells
The crossover from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields is studied in the diffusive to quasi-ballistic and zero-field to quantum Hall regime. In-plane gates and Hall-bars have been fabricated from an InGaAs/InA...
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| Автори: | , , , , |
|---|---|
| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
AIP Publishing LLC
2024-05-01
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| Серія: | APL Materials |
| Онлайн доступ: | http://dx.doi.org/10.1063/5.0203097 |
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