Refractive Indices of Ge and Si at Temperatures between 4–296 K in the 4–8 THz Region

Refractive indices of high resistivity Si and Ge were measured at temperatures between 4–296 K and at frequencies between 4.2–7.7 THz using a Fourier-transform spectrometer (FTS) in transmission mode. A phenomenological model of the temperature dependence of the refractive index is proposed.

書誌詳細

主要な著者:	Mira Naftaly, Steve Chick, Guy Matmon, Ben Murdin
フォーマット:	Artigo
言語:	Inglês
出版事項:	MDPI AG 2021-01-01
シリーズ:	Applied Sciences
主題:	terahertz refractive index temperature dependence silicon germanium
オンライン･アクセス:	https://www.mdpi.com/2076-3417/11/2/487
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