Simulation and Performance Analysis of 32 nm FinFet based 4-Bit Carry Look Adder
FinFET at 32 nm and beyond is an emerging transistor technology offer interesting delay–power tradeoff. FinFETs are a necessary step in the evolution of semiconductors because bulk CMOS has difficulties in scaling beyond 32 nm. Use of the back gate leads to very interesting design opportunities....
Gorde:
| Egile Nagusiak: | , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Sumy State University
2017-10-01
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| Saila: | Журнал нано- та електронної фізики |
| Gaiak: | |
| Sarrera elektronikoa: | http://jnep.sumdu.edu.ua:8080/download/numbers/2017/5/articles/Proof_JNEP_05003.pdf |
| Etiketak: |
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