Crystal growth principles, methods, properties of silicon carbide and its new process prepared from silicon cutting waste
The third-generation semiconductor silicon carbide (SiC) has attracted widespread attention due to its excellent properties, such as high thermal conductivity, large bandgap, high breakdown field strength, and high saturation electronic drift rate, etc. Consequently, the growth process, physical str...
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| Autors principals: | , , , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Elsevier
2025-01-01
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| Col·lecció: | Journal of Materials Research and Technology |
| Matèries: | |
| Accés en línia: | http://www.sciencedirect.com/science/article/pii/S2238785424030424 |
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