Crystal growth principles, methods, properties of silicon carbide and its new process prepared from silicon cutting waste

The third-generation semiconductor silicon carbide (SiC) has attracted widespread attention due to its excellent properties, such as high thermal conductivity, large bandgap, high breakdown field strength, and high saturation electronic drift rate, etc. Consequently, the growth process, physical str...

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Detalhes bibliográficos

Principais autores:	Shengqian Zhang, Yongsheng Ren, Xingwei Yang, Wenhui Ma, Hui Chen, Guoqiang Lv, Yun Lei, Yi Zeng, Zhengxing Wang, Bingxi Yu
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Elsevier 2025-01-01
coleção:	Journal of Materials Research and Technology
Assuntos:	Silicon carbide Growth principles and methods Crystal structure Properties Silicon cutting waste
Acesso em linha:	http://www.sciencedirect.com/science/article/pii/S2238785424030424
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