Annealing‐Free Ohmic Contacts to n‐Type GaN via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Sub‐Nanometer AlOx

Abstract A plasma‐assisted atomic layer deposition (PE‐ALD) process is reported for creating ohmic contacts to n‐type GaN that combines native oxide reduction, near‐surface doping, and encapsulation of GaN in a single processing step, thereby eliminating the need for both wet chemical etching of the...

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Bibliografiske detaljer

Principais autores:	Maximilian Christis, Alex Henning, Johannes D. Bartl, Andreas Zeidler, Bernhard Rieger, Martin Stutzmann, Ian D. Sharp
Format:	Artigo
Sprog:	Inglês
Udgivet:	Wiley-VCH 2024-02-01
Serier:	Advanced Materials Interfaces
Fag:	atomic layer deposition gallium nitride interface engineering ohmic contacts plasma modification
Online adgang:	https://doi.org/10.1002/admi.202300758
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