Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection
In this paper, buffer-free germanium–tin (GeSn) films on Si(001) grown by molecular beam epitaxy are characterized. GeSn layers show high thermal stability under complementary metal–oxide–semiconductor processing conditions. The experimental results demonstrate that Ge<sub>0.928...
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| Hoofdauteurs: | , , , , , , , |
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| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
IEEE
2018-01-01
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| Reeks: | IEEE Photonics Journal |
| Onderwerpen: | |
| Online toegang: | https://ieeexplore.ieee.org/document/8481401/ |
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