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Laser Processing of Transparent Wafers with a AlGaN/GaN Heterostructures and High-Electron Mobility Devices on a Backside

Sapphire and silicon carbide substrates are used for growth of the III-N group heterostructures to obtain the electronic devices for high power and high frequency applications. Laser micromachining of deep channels in the frontside of the transparent wafers followed by mechanical cleavage along the...

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Uloženo v:
Hlavní autoři: Simonas Indrišiūnas, Evaldas Svirplys, Justinas Jorudas, Irmantas Kašalynas
Médium: Artigo
Jazyk:Inglês
Vydáno: MDPI AG 2021-04-01
Edice:Micromachines
Témata:
laser micromachining
sapphire
silicon carbide
AlGaN/GaN heterostructures
high-electron mobility devices
On-line přístup:https://www.mdpi.com/2072-666X/12/4/407
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